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Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering

2019-11-21

 

Author(s): Long, YX (Long, Yuxiong); Huang, JZ (Huang, Jun Z.); Huang, QQ (Huang, Qianqian); Xu, N (Xu, Nuo); Jiang, XW (Jiang, Xiangwei); Niu, ZC (Niu, Zhi-Chuan); Esseni, D (Esseni, David); Huang, R (Huang, Ru); Li, SS (Li, Shu-Shen)

Source: IEEE TRANSACTIONS ON ELECTRON DEVICES Volume: 66 Issue: 11 Pages: 4982-4988 DOI: 10.1109/TED.2019.2940687 Published: NOV 2019

Abstract: We propose two different designs of p-type piezoelectric (PE) FinFETs (PE-FinFETs) covering lowpower (LP) and high-performance (HP) operation modes. LP mode PE-FinFETs achieve a lower OFF-current (I-OFF) and HP mode PE-FinFETs result in a larger ON-current (I-ON). These two different modes are achieved by simply changing the outer PE-gatesbias. The advanced-nonequilibrium Green's function (NEGF) approach self-consistent with six-band k . p method including phonon scattering is used to investigate the device performance. The gate voltage-controlled strain is analytically derived from the principle of PE effect. The HP and LP PE-FinFETs are studied, respectively, and the impacts of channel material, device orientation, and phonon scattering on both HP and LP PE-FinFETs are comprehensively investigated. The simulation results show that Ge is superior to Si for both LP and HP PE-FinFETs. With a supply voltage of 0.5 V, IOFF of Ge LP mode PE-FinFETs is reduced by 18 times, and Ge HP mode PE-FinFETs obtain 50% ON-current enhancement. I-ON (I-OFF) is unchanged for LP (HP) mode PE-FinFETs. Phonon scattering not only causes a large ION degradation but also changes the optimal device orientation for both Si and Ge HP mode PE-FinFETs compared to their counterparts without phonon scattering.

Accession Number: WOS:000494419900072

ISSN: 0018-9383

eISSN: 1557-9646

Full Text: https://ieeexplore.ieee.org/document/8850315/



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